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| DMP2012SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * SC-59 NEW PRODUCT Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Drain D Gate ESD protected TOP VIEW Gate Protection Diode G Source S TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 12 -0.7 -2.8 Unit V V A A Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State Pulsed Drain Current (Note 3) Thermal Characteristics @TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 500 250 -65 to +150 Unit mW C/W C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss tD(ON) tD(OFF) tr tf Min -20 -0.5 Typ 0.23 0.37 1.5 -0.8 180 120 50 5 55 20 70 Max -10 10 -1.2 0.30 0.50 -1.1 Unit V A A V S V pF pF pF ns ns ns ns Test Condition VGS = 0V, ID = 250mA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -0.4A VGS = -2.5V, ID = -0.4A VDS = -10V, ID = 0.4A VGS = 0V, IS = -0.7A VDS = -10V, VGS = 0V f = 1.0MHz Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time Notes: 1. 2. 3. 4. 5. VDD = -10V, ID = -0.4A, VGS = -5.0V, RGEN = 50 Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMP2012SN Document number: DS30790 Rev. 3 - 2 1 of 4 www.diodes.com November 2007 (c) Diodes Incorporated DMP2012SN 3 -5V 3 2.5 -3.5V -3V -2.5V TA = 25C VDS = 10V 2.5 -ID, DRAIN CURRENT (A) -4.5V 2 -4V -ID, DRAIN CURRENT (A) 2 NEW PRODUCT 1.5 -2V 1.5 1 TJ = 25C 1 0.5 VGS = -1.5V 0.5 TJ = 125C TJ = -55C 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 3 0 0 1 1.5 2 2.5 -VGS, Gate-Source Voltage(V) Fig. 2 Typical Transfer Characteristics 0.5 3 0.8 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () TJ = 25C RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0.6 VGS = -4.5V 0.4 VGS = -10V 0.2 ID = 0.5A ID = 1.0A 0 0.1 0 2 4 6 8 10 0 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 On-Resistance vs. Gate Voltage 0.8 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1 1.5 2 2.5 -ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs. Drain Current 0.5 3 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 VDS = 10V ID = 1mA RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0.6 ID = -0.7A -0.4A 0.4 VGS = -2.5V ID = -0.7A 0.2 VGS = -4.5V 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Gate Threshold Voltage vs. Temperature DMP2012SN Document number: DS30790 Rev. 3 - 2 2 of 4 www.diodes.com November 2007 (c) Diodes Incorporated DMP2012SN 3 2.5 C, CAPACITANCE (pF) 1,000 f = 1MHz VGS = 0V TA = 25C IDR, REVERSE DRAIN CURRENT (A) 2 Ciss NEW PRODUCT 1.5 100 Crss Coss 1 0.5 0 10 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 20 Ordering Information Part Number DMP2012SN-7 Notes: (Note 6) Case SC-59 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PS1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September PS1 Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 2007 U Mar 3 Apr 4 YM 2008 V May 5 Jun 6 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Package Outline Dimensions A Dim A TOP VIEW BC G H K M N J D L SC-59 Min Max 0.35 0.50 B 1.50 1.70 C 2.70 3.00 D 0.95 G 1.90 H 2.90 3.10 J 0.013 0.10 K 1.00 1.30 L 0.35 0.55 M 0.10 0.20 N 0.70 0.80 0 8 All Dimensions in mm DMP2012SN Document number: DS30790 Rev. 3 - 2 3 of 4 www.diodes.com November 2007 (c) Diodes Incorporated DMP2012SN Suggested Pad Layout Dimensions Value (in mm) Z 4.0 G 1.2 X 0.9 Y 1.4 C 2.6 E 0.95 Y Z G C NEW PRODUCT X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP2012SN Document number: DS30790 Rev. 3 - 2 4 of 4 www.diodes.com November 2007 (c) Diodes Incorporated |
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